Square wave excitability in quantum dot lasers under optical injection

Quantum dot semiconductor lasers with optical feedback

G. Huyet; 1, D. O’Brien1, S. P. Hegarty1, J. G. McInerney1, A. V. Uskov2, D. Bimberg3, C. Ribbat3, V. M. Ustinov4, A. E. Zhukov4, S. S. Mikhrin4, A. R. Kovsh4, J. K. White5, K. Hinzer5, and A. J. SpringThorpe6 1 Physics Department, National University of Ireland, University College Cork, Cork, Ireland 2 NMRC, National University of Ireland, University College Cork, Lee Malting, Cork, Ireland 3 ...

Coherent spectral bandwidth combining by optical pulse injection locking in quantum dot modelocked semiconductor diode lasers

An optical pulse injection locking technique is employed to generate shorter pulses from a passively modelocked quantum dot laser. The optical pulse injection locking enables the coherent addition of phaselocked longitudinal mode groups from two separate modelocked lasers without the use of stabilisation control loops, thus increasing the spectral bandwidth output resulting in optical pulses wi...

Frequency-dependent linewidth enhancement factor of optical injection-locked quantum dot/dash lasers.

Combining theoretical and experimental studies show that optical injection strongly changes the behavior of the linewidth enhancement factor (α(H)-factor) and the FM-to-AM indices ratio (FAIR) in quantum dash/dot semiconductor lasers. In contrast to solitary lasers, both the α(H)-factor and the FAIR at low-frequency modulation are reduced by optical injection. At high modulation frequency, howe...

Stability and Tolerance to Optical Feedback of Quantum Dot Lasers

Recent experiments have explored the response of a single modeoptically injected QD laser. The experiments identify a domain ofbistability between two steady states at negative detuning and a Hopfbifurcation close to the locking threshold at positive detuning. More-over, the laser is stable for all injection levels at zero detuning. Theseobservations lead to a stability ...

Time-resolved four-wave mixing in InAs/InGaAs quantum-dot amplifiers under electrical injection